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              Page 2 QW-BE007 REV:C Comchip Technology CO., LTD. Rating and Characteristic Curves (CEFM101-G Thru. CEFM105-G ) SMD Efficient Fast Recovery Rectifiers Fig. 3 - T est Circuit Diagram and Reverse Recovery T ime Characteristics (+) (+) 25Vdc (approx.) ( ) ( ) PULSE GENERATOR (NOTE 2) OSCILLISCOPE (NOTE 1) 1W NON- INDUCTIVE NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise T ime= 10ns max., Source Impedance= 50 ohms. +0.5A 0 -0.25A -1.0A | | | | | | | | 1cm SET TIME BASE FOR 50 / 20ns / cm trr D.U.T. 10W NONINDUCTIVE 50W NONINDUCTIVE Fig. 2 - Typical Forward C urrent Derating C urve A v e r a g e F o r w a r d C u r r e n t , ( A ) Ambient Temperature, (°C) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 Fig.1 - T ypical Forward Characteristics Fig.5 - T ypical Junction Capacitance Reverse Voltage, (V) J u n c t i o n C a p a c i t a n c e , ( p F ) P e a k F o r w a r d S u r g e C u r r e n t , ( A ) Fig. 4 - Maximum Non-Repetitive Forward Surge Current 0 10 15 30 25 20 1 5 10 50 100 Number of Cycles at 60Hz 8.3mS Single Half Sine Wave JEDEC methode TJ=25 °C 25 50 75 100 125 150 175 Single Phase Half Wave 60HZ Resistive or Inductive Load 0.375”(9.5mm)Lead Length Forward Voltage, (V) 0.010.4 I n s t a n t a n e o u s F o r w a r d C u r r e n t , ( A ) 0.1 1 10 0.8 1.2 2.0 1.6 C E F M 1 0 1 -G ~ C E F M 1 0 3 -G 0.6 1.0 1.4 1.8 C E F M 1 0 1 -G C E F M 1 0 5 -G Pulse width 300μs Tj=25 C 1% duty cycle 0 5 10 15 20 25 30 35 0.01 0.1 1.0 10 100 |